Date of Award
Spring 1-1-2025
Document Type
Dissertation
Degree Name
Doctor of Philosophy (PhD)
Department
Physics
First Advisor
Ahn, Charles
Abstract
This dissertation explores the fabrication, structural characterization, and quantum transport properties of chalcogenide and oxide thin films. High-quality SnTe films were synthesized via molecular beam epitaxy (MBE), demonstrating tunable topological surface states through nanoscale patterning. Magnetoconductivity measurements revealed weak antilocalization (WAL) effects across continuous and patterned films, with coherence lengths governed by boundary scattering in hole-patterned geometries. Advanced focused ion beam (FIB) protocols enabled atomic-resolution transmission electron microscopy (TEM) of monolayer ZrO$_2$ on silicon, defect distribution in off-stoichiometric CaWO$_4$ films and phase analysis in YVO$_4$ thin films. Josephson junctions fabricated on superconducting Nd$_{1-x}$Eu$_x$NiO$_2$ thin films exhibited macroscopic quantum transport behavior. By integrating nanofabrication with multi-scale characterization, this work establishes design principles for investigating quantum phenomena in low-dimensional systems, advancing applications in topological electronics and superconducting devices.
Recommended Citation
Pan, Shuhang, "Fabrication and Characterization of Chalcogenide and Oxide Thin Films" (2025). Yale Graduate School of Arts and Sciences Dissertations. 1751.
https://elischolar.library.yale.edu/gsas_dissertations/1751